Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs

Nano Scale Single and Double Gate SOI MOSFETs Structures and Compression of Electrical Performance Factors

With the scaling of MOSFETs in to sub-100nm regim, Silicon – on – Insulator (SOI), single gate (SG) and double gate (DG) MOSFETs are expected to replace tradional bulk MOSFETS. These novel MOSFETs devices will be strong contenders in RF applications in wireless communication market. This work is concerned about the device scaling and different design structures of nano scale SOI MOSFETs. The co...

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. It is based on the solution of PoissonBoltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate boundary approximation. The model is contin...

A continuous analytic I–V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

This paper presents for the first time a continuous analytic I–V model for long-channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach. It is based on the solution of the Poisson–Boltzmann equation and the current continuity equation of the Pao–Sah current formulation in terms of the mobile carrier concentration under an appropriate ...

Electrical behavior of ultra - thin body silicon - on - insulator n - MOSFETs at a high operating temperature

Design and Fabrication of 50-nm Thin-Body p-MOSFETs With a SiGe Heterostructure Channel

Thin-body p-channel MOS transistors with a SiGe/Si heterostructure channel were fabricated on silicon-on-insulator (SOI) substrates. A novel lateral solid-phase epitaxy process was employed to form the thin-body for the suppression of shortchannel effects. A selective silicon implant that breaks up the interfacial oxide was shown to facilitate unilateral crystallization to form a single crystal...